（）InGaNLED
3 :,AlGaInPP,。.,IIIInGaN550 nm …
Enhancement in external quantum efficiency of AlGaInP …
To investigate the effects of their surface recovery and optical properties, extremely small sized (12 µm × 12 µm mesa area) red AlGaInP micro light emitting diodes ( $$upmu$$ LED) were ...
AlGaInP_LED.doc
AlGaInP LED LED,。.,LED。. LED,ηex（1）。. ηex = ηin·Cex （1） ：ηin；Cex。. LED ...
AlGaInPLED
AlGaInPLED.pdf. 1．1L。.,99．98％。.,, …
Study on the effect of thermal annealing process on …
nAlGaInPLED,, , AlGaInP LED [6], 630 nmAlGaInP LED 60%[7], …
AlGaInPLED
AlGaInPLED,:a)GaAs,GaInP;b)GeAu, …
ALGaInP _
AlGaAs,,,Ga,50%,650nm。. AlGaInP,,, ...
AlGaInPLED -AET-
AlGaInPLED. . ：,AlGaInPGaAs,GaAsAlGaInP, …
Size effects of AlGaInP red vertical micro-LEDs on silicon …
To study the size effect of AlGaInP red micro-LEDs on the silicon substrate, we fabricated five AlGaInP red micro-LEDs with different pixel sizes (160 × 160, 80 × 80, 40 × 40, 20 × 20, and 10 × 10 µm 2) and studied their electrical and optical properties.Smaller micro-LEDs have smaller leakage current and larger series resistance and can withstand …
Micro-LED----
,（10μm） …
Micro-LED----
,（10μm）AlGaInPMicro-LED。. LED …
InGaN
: GaInP/ AlGaInP . 15° GaAs . …
Enhancement in external quantum efficiency of AlGaInP …
Schematic of AlGaInP-based μ-LED fabrication procedure. MOVPE growth of epilayers (upper-left panel), followed by the ICP dry etching process for mesa patterning (upper-right panel).
780nm InGaAsP/ InGaP/ Al GaAs
AlGaAs (AlGaInP) . ,、 、[1～3], AlGaInP AlGaAs . InGaAsP/ InGaP/ AlGaAs …
Mini/Micro LED？-LED
：,4K、8K Mini5G,Mini LED。. "",、、,Mini/Micro LED …
638nm
5、. 。.,,,、,, ...
AuGeNi/n-AlGaInP
n-AlGaInPAlOAl [9], [10]., n-AlGaInP., n-AlGaInPn, .
AlGaInP----LED（Ⅲ-Ⅴ）-
： 17:59:17 ： ： 20230320 070331. AlGaInP----LED（Ⅲ-Ⅴ）. 1、. …
Enhancement of light extraction efficiency of AlGaInP …
Fig. 2 shows the wavelength dependence of extraction efficiency of AlGaInP-based LEDs without SiO 2, with planar SiO 2, with microscale SiO 2 …
Enhanced Light Output of AlGaInP Light Emitting
doped layer, a 2- m-thick n-AlGaInP layer, a 50-nm-thick n-AlInP cladding layer, AlGaInP/InGaP multiple quantum wells (MQWs), a 50-nm-thick p-AlInP cladding layer and a 9- m-thick p-GaP layer. Figure 1(a) schematically shows the structure of the proposed device (called LED-A). For the device fabrication, a 0.5- m-thick insulating SiO2
matlabTE/TM_
s,p,TETM Z,zexp(ikz),,x,EHx0,Maxwell,,TETM,TETM。
Nonselective wet chemical etching of GaAs and AlGaInP …
The nonselective wet chemical etching of AlGaInP and GaAs in pure iodic (HIO 3) acid and in hydrochloric acid (HCl) associated different oxidant agents has been evaluated. The pure iodic acid is nonselective between III–V phosphides and arsenides.
AlGaAs, AlInGapInGaN
AlGaAs, AlInGap InGaN? LEDs。. AlGaAs——。. AlInGap——,,,,。. InGaN——, ...
AlGaInPLED
13、LED：AlGaN,LED：InGaN,LED：AlGaInP,LED：AlGaAs。. GaP,。. …
AlGalnP()LED(III-Ⅴ)--51
AlGalnP ()LED (III-Ⅴ) AlGaInP (A1Ga1~)05h05P, (ω5nm)、 A1280APG176M (610nm) (590nm),。. GaInPhPGaP ...